Hot-Carrier Degradation in Bipolar Transistors at 300 and 110 K—Effect on BiCMOS Inverter Performance

J. David Burnett, Chen-Ming Hu

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

The degradation of bipolar transistors at 300 and 110 K under de base-emitter reverse-bias stress has been measured. It is found that, for the same reverse voltage, the reverse current is about three to four times smaller at 110 than at 300 K, but the rate of base current degradation is several times larger. A method for modeling the degradation due to the stress from a periodic signal is proposed. The resulting expression for degradation is compatible with the SPICE bipolar model and has been used to simulate the degradation of a BiCMOS inverter operating at 300 and 110 K.

Original languageEnglish
Pages (from-to)1171-1173
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume37
Issue number4
DOIs
StatePublished - 1 Jan 1990

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