Hot-carrier currents of SOI MOSFETs

Hsing jen Wann*, Joe King, Jian Chen, Ping K. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

4 Scopus citations

Abstract

An important device constraint that has to be considered for the SOI MOSFET is the hot-carrier effect that increases with device miniaturization. Providing a link between the hot-carrier currents and the device design parameters for the bulk MOSFETs is a quasi-two-dimensional model.

Original languageEnglish
Pages118-119
Number of pages2
StatePublished - 1 Dec 1993
EventProceedings of the IEEE International SOI Conference - Palm Springs, CA, USA
Duration: 5 Oct 19937 Oct 1993

Conference

ConferenceProceedings of the IEEE International SOI Conference
CityPalm Springs, CA, USA
Period5/10/937/10/93

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