An important device constraint that has to be considered for the SOI MOSFET is the hot-carrier effect that increases with device miniaturization. Providing a link between the hot-carrier currents and the device design parameters for the bulk MOSFETs is a quasi-two-dimensional model.
|Number of pages||2|
|State||Published - 1 Dec 1993|
|Event||Proceedings of the IEEE International SOI Conference - Palm Springs, CA, USA|
Duration: 5 Oct 1993 → 7 Oct 1993
|Conference||Proceedings of the IEEE International SOI Conference|
|City||Palm Springs, CA, USA|
|Period||5/10/93 → 7/10/93|