Homoepitaxial growth and stress analysis of (111) diamond film with embedded gold islands

Kun An Chiu*, Ping Hsun Wu, Chun Yen Peng, Jr Sheng Tian, Li Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations


The internal stress in high-quality (111) homoepitaxial diamond film grown on high-pressure high temperature (HPHT) synthesized single crystal diamond substrate by chemical vapor deposition (CVD) can be reduced effectively by embedding Au islands in diamond. Au islands formed from an Au layer deposited on the diamond substrate by electron beam evaporation can be obtained after hydrogen plasma annealing. Transmission electron microscopy and X-ray diffraction results show that the Au islands covered with CVD diamond have a size in a few hundreds of nanometers and are oriented with diamond in the orientation relationship of {111}Au//{111}Dia and <110 > Au//<110 > Dia. The surfaces of the CVD diamond films grown on substrate with and without Au coating exhibit cracks when the film thickness reaches 3.5 μm. As evaluated from the Raman peak shift, it is shown that the internal tensile stress in the film with Au islands is less than in the same thick film on substrate without Au coating. A crack-free (111) homoepitaxial diamond film in the same thickness can be obtained by insertion of multilayers of Au islands in CVD diamond.

Original languageEnglish
Pages (from-to)104-108
Number of pages5
StatePublished - 1 Aug 2015


  • Diamond
  • Gold
  • Homoepitaxial growth
  • Microwave plasma chemical vapor deposition
  • Stress

Fingerprint Dive into the research topics of 'Homoepitaxial growth and stress analysis of (111) diamond film with embedded gold islands'. Together they form a unique fingerprint.

  • Cite this