HOLE TRAPPING AND HOT-CARRIER INDUCED DEVICE INSTABILITY IN THIN NITRIDE/OXIDE IGFETS.

K. K. Young*, T. Y. Chan, Chen-Ming Hu, W. G. Oldham

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

The hot-carrier-induced threshold voltage shift, G//m degradation, and DELTA I//d//s reduction are compared for nitride/oxide IGFETs having different nitride and oxide thickness and MOSFETs. The results show that the degradation levels and degradation rates are not significantly increased by the presence of a thin nitride layer in the gate. Considering the other superior properties relative to thermal oxide, nitride/oxide stacked films are considered attractive for thin-gate dielectrics on active devices.

Original languageEnglish
Pages (from-to)65-66
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1 Dec 1986

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