The hot-carrier-induced threshold voltage shift, G//m degradation, and DELTA I//d//s reduction are compared for nitride/oxide IGFETs having different nitride and oxide thickness and MOSFETs. The results show that the degradation levels and degradation rates are not significantly increased by the presence of a thin nitride layer in the gate. Considering the other superior properties relative to thermal oxide, nitride/oxide stacked films are considered attractive for thin-gate dielectrics on active devices.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1 Dec 1986|