Hole Transport Manipulation to Improve the Hole Injection for Deep Ultraviolet Light-Emitting Diodes

Zi Hui Zhang; Sung Wen Huang Chen; Yonghui Zhang; Luping Li; Sheng Wen Wang; Kangkai Tian; Chunshuang Chu; Mengqian Fang; Hao-Chung Kuo; Wengang Bi

doi:10.1021/acsphotonics.7b00443

Hole Transport Manipulation to Improve the Hole Injection for Deep Ultraviolet Light-Emitting Diodes

Zi Hui Zhang, Sung Wen Huang Chen, Yonghui Zhang, Luping Li, Sheng Wen Wang, Kangkai Tian, Chunshuang Chu, Mengqian Fang, Hao-Chung Kuo^*, Wengang Bi

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

In this report, we propose to enhance the hole injection efficiency by adjusting the barrier height of the p-type electron blocking layer (p-EBL) for ∼273 nm deep ultraviolet light-emitting diodes (DUV LEDs). The barrier height for the p-EBL is modified by employing a p-Al_0.60Ga_0.40N/Al_0.50Ga_0.50N/p-Al_0.60Ga_0.40N structure, in which the very thin Al_0.50Ga_0.50N layer is able to achieve a high local hole concentration, which is very effective in reducing the effective barrier height of the p-EBL for holes. More importantly, besides the thermionic emission, such a p-EBL structure can also favor a strong intraband tunneling process for holes. As a result, we can obtain a more efficient hole injection into the quantum wells, leading to a remarkably improved optical power for the DUV LED with the proposed p-EBL architecture.

Original language	English
Pages (from-to)	1846-1850
Number of pages	5
Journal	ACS Photonics
Volume	4
Issue number	7
DOIs	https://doi.org/10.1021/acsphotonics.7b00443
State	Published - 19 Jul 2017

Keywords

carrier transport
deep ultraviolet LED
hole injection
p-EBL

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title = "Hole Transport Manipulation to Improve the Hole Injection for Deep Ultraviolet Light-Emitting Diodes",

abstract = "In this report, we propose to enhance the hole injection efficiency by adjusting the barrier height of the p-type electron blocking layer (p-EBL) for ∼273 nm deep ultraviolet light-emitting diodes (DUV LEDs). The barrier height for the p-EBL is modified by employing a p-Al0.60Ga0.40N/Al0.50Ga0.50N/p-Al0.60Ga0.40N structure, in which the very thin Al0.50Ga0.50N layer is able to achieve a high local hole concentration, which is very effective in reducing the effective barrier height of the p-EBL for holes. More importantly, besides the thermionic emission, such a p-EBL structure can also favor a strong intraband tunneling process for holes. As a result, we can obtain a more efficient hole injection into the quantum wells, leading to a remarkably improved optical power for the DUV LED with the proposed p-EBL architecture.",

keywords = "carrier transport, deep ultraviolet LED, hole injection, p-EBL",

author = "Zhang, {Zi Hui} and {Huang Chen}, {Sung Wen} and Yonghui Zhang and Luping Li and Wang, {Sheng Wen} and Kangkai Tian and Chunshuang Chu and Mengqian Fang and Hao-Chung Kuo and Wengang Bi",

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Hole Transport Manipulation to Improve the Hole Injection for Deep Ultraviolet Light-Emitting Diodes. / Zhang, Zi Hui; Huang Chen, Sung Wen; Zhang, Yonghui; Li, Luping; Wang, Sheng Wen; Tian, Kangkai; Chu, Chunshuang; Fang, Mengqian; Kuo, Hao-Chung; Bi, Wengang.

In: ACS Photonics, Vol. 4, No. 7, 19.07.2017, p. 1846-1850.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Hole Transport Manipulation to Improve the Hole Injection for Deep Ultraviolet Light-Emitting Diodes

AU - Zhang, Zi Hui

AU - Huang Chen, Sung Wen

AU - Zhang, Yonghui

AU - Li, Luping

AU - Wang, Sheng Wen

AU - Tian, Kangkai

AU - Chu, Chunshuang

AU - Fang, Mengqian

AU - Kuo, Hao-Chung

AU - Bi, Wengang

PY - 2017/7/19

Y1 - 2017/7/19

N2 - In this report, we propose to enhance the hole injection efficiency by adjusting the barrier height of the p-type electron blocking layer (p-EBL) for ∼273 nm deep ultraviolet light-emitting diodes (DUV LEDs). The barrier height for the p-EBL is modified by employing a p-Al0.60Ga0.40N/Al0.50Ga0.50N/p-Al0.60Ga0.40N structure, in which the very thin Al0.50Ga0.50N layer is able to achieve a high local hole concentration, which is very effective in reducing the effective barrier height of the p-EBL for holes. More importantly, besides the thermionic emission, such a p-EBL structure can also favor a strong intraband tunneling process for holes. As a result, we can obtain a more efficient hole injection into the quantum wells, leading to a remarkably improved optical power for the DUV LED with the proposed p-EBL architecture.

AB - In this report, we propose to enhance the hole injection efficiency by adjusting the barrier height of the p-type electron blocking layer (p-EBL) for ∼273 nm deep ultraviolet light-emitting diodes (DUV LEDs). The barrier height for the p-EBL is modified by employing a p-Al0.60Ga0.40N/Al0.50Ga0.50N/p-Al0.60Ga0.40N structure, in which the very thin Al0.50Ga0.50N layer is able to achieve a high local hole concentration, which is very effective in reducing the effective barrier height of the p-EBL for holes. More importantly, besides the thermionic emission, such a p-EBL structure can also favor a strong intraband tunneling process for holes. As a result, we can obtain a more efficient hole injection into the quantum wells, leading to a remarkably improved optical power for the DUV LED with the proposed p-EBL architecture.

KW - carrier transport

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