Hole Schottky barrier height enhancement and its application to metal-semiconductor-metal photodetectors

Sheng-Di Lin*, C. P. Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Hole Schottky barrier heights on GaAs have been studied experimentally by using a conventional metal-semiconductor-metal photodetector (MSMPD) structure. The Schottky barrier height for holes was obtained directly by the hole-current dominated dark current measurement of the MSMPD. With a thin, highly doped surface layer, control of the Schottky barrier heights for holes from 0.48 to 0.79 eV was obtained. By using these engineered Schottky contacts in the MSMPDs, over three orders of magnitude reduction in the dark currents of the MSMPDs was achieved.

Original languageEnglish
Pages (from-to)5666-5669
Number of pages4
JournalJournal of Applied Physics
Volume90
Issue number11
DOIs
StatePublished - 1 Dec 2001

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