Hole Injection SiO2Breakdown Model for Very Low Voltage Lifetime Extrapolation

Klaus F. Schuegraf, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

443 Scopus citations

Abstract

In this paper, we present a model for silicon dioxide breakdown characterization, valid for a thickness range between 25 A and 130 A, which provides a method for predicting dielectric lifetime for reduced power supply voltages and aggressively scaled oxide thicknesses. This model, based on hole injection from the anode, accurately predicts qbdand tbdbehavior including a fluence in excess of 107 C/cm2 at an oxide voltage of 2.4 V for a 25 A oxide. Moreover, this model is a refinement of and fully complementary with the well known 1/E model, while offering the ability to predict oxide reliability for low voltages.

Original languageEnglish
Pages (from-to)761-767
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume41
Issue number5
DOIs
StatePublished - 1 Jan 1994

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