Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer

Bing Cheng Lin, Kuo Ju Chen, Chao Hsun Wang, Ching Hsueh Chiu, Yu-Pin Lan, Chien-Chung Lin, Po-Tsung Lee, Min Hsiung Shih, Yen Kuang Kuo, Hao-Chung Kuo

Research output: Contribution to journalArticle

41 Scopus citations

Abstract

A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29% as compared with 44% for original LED, which reflects the improvement in hole injection and electron overflow in our design.

Original languageEnglish
Pages (from-to)463-469
Number of pages7
JournalOptics Express
Volume22
Issue number1
DOIs
StatePublished - 13 Jan 2014

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