Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, Hao-Chung Kuo, Tien-chang Lu, S. C. Wang

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190 Scopus citations

Abstract

A graded-composition electron blocking layer (GEBL) with aluminum composition increasing along the [0001] direction was designed for c-plane InGaN/GaN light-emitting diodes (LEDs) by employing the band-engineering. The simulation results demonstrated that such GEBL can effectively enhance the capability of hole transportation across the EBL as well as the electron confinement. Consequently, the LED with GEBL grown by metal-organic chemical vapor deposition exhibited lower forward voltage and series resistance and much higher output power at high current density as compared to conventional LED. Meanwhile, the efficiency droop was reduced from 34% in conventional LED to only 4% from the maximum value at low injection current to 200 A/ cm2.

Original languageEnglish
Article number261103
Number of pages3
JournalApplied Physics Letters
Volume97
Issue number26
DOIs
StatePublished - 27 Dec 2010

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