Hole g-factor anisotropies in individual InAs quantum rings

R. Kaji, T. Tominaga, Y. N. Wu, M. F. Wu, Shun-Jen Cheng, S. Adachi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We investigated the electron and hole g-factors in individual InAs/GaAs quantum rings (QRs). From the magneto-photoluminescence measurements under a transverse magnetic field, we evaluated the in-plane g-factors of electron and hole spins by rotating the sample systematically around the crystal growth axis. The experimental results indicate that the in-plane and the out-of-plane anisotropies in hole g-factor are larger than those of electron g-factor, and the value of the hole in-plane g-factor varies largely from QR to QR while the electron g-factor is almost a constant value. From the model calculation considering the effects of shape anisotropies and uniaxial stress, we examined the correlation between the in-plane g-factors and the degree of valence band mixing. Further, the experimentally obtained trend in g-factors was in agreement qualitatively with theoretical consideration.

Original languageEnglish
Title of host publication2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509019649
DOIs
StatePublished - 1 Aug 2016
Event2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan
Duration: 26 Jun 201630 Jun 2016

Publication series

Name2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

Conference

Conference2016 Compound Semiconductor Week, CSW 2016
CountryJapan
CityToyama
Period26/06/1630/06/16

Keywords

  • g-factors
  • hole
  • InAs
  • quantum structures

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