History dependence of output characteristics of silicon-on-insulator (SOI) MOSFET's

K. A. Jenkins*, J. Y.C. Sun, J. Gautier

*Corresponding author for this work

Research output: Contribution to journalReview article

10 Scopus citations

Abstract

It is demonstrated that the drain current overshoot in partially depleted SOI MOSFET's has a significant history dependence or memory effect, even in the absence of impact ionization under low drain biases. The measured output characteristics of partially depleted SOI MOSFET's are shown to be dynamically dependent on their switching history, frequency, and bias conditions due to the finite time constants of carrier generation (thermal or impact ionization) and recombination in the floating body.

Original languageEnglish
Pages (from-to)7-9
Number of pages3
JournalIEEE Electron Device Letters
Volume17
Issue number1
DOIs
StatePublished - Jan 1996

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