History dependence of non-fully depleted (NFD) digital SOI circuits

F. Assaderaghi*, G. G. Shahidi, M. Hargrove, K. Hathorn, H. Hovel, S. Kulkarni, W. Rausch, D. Sadana, D. Schepis, R. Schulz, D. Yee, J. Sun, R. Dennard, B. Davari

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

33 Scopus citations

Abstract

In this paper we experimentally demonstrate that the switching speed of digital circuits built from Non-Fully Depleted (NFD) SOI MOSFETs show a time dependence. Using a very high-bandwidth setup and pulses as short as 1 nsec, the magnitude and range of this memory effect are determined. It is demonstrated that the propagation delay variations have switching-history, Vdd, and Leff dependence. The cause of this behavior is traced to the SOI MOSFET's floating body and the dynamic variations of its stored charge and potential.

Original languageEnglish
Pages (from-to)122-123
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1996
EventProceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 11 Jun 199613 Jun 1996

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