In this paper we experimentally demonstrate that the switching speed of digital circuits built from Non-Fully Depleted (NFD) SOI MOSFETs show a time dependence. Using a very high-bandwidth setup and pulses as short as 1 nsec, the magnitude and range of this memory effect are determined. It is demonstrated that the propagation delay variations have switching-history, Vdd, and Leff dependence. The cause of this behavior is traced to the SOI MOSFET's floating body and the dynamic variations of its stored charge and potential.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1996|
|Event||Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA|
Duration: 11 Jun 1996 → 13 Jun 1996