Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

C. H. Cheng*, P. C. Chen, Y. H. Wu, M. J. Wu, F. S. Yeh, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


Highly uniform current distributions of high resistance state (HRS) and low resistance state (LRS), low 0.6 pJ switching energy, fast 30 ns switching speed, and good 10 6 cycling endurance are achieved in Ni/GeO x/Ta 2O 5-yN y/TaN resistive random access memory (RRAM) devices. Such good performance is attributed to nitrogen-related acceptor level in Ta 2O 5- yN y for better hopping conduction, which leads to forming-free resistive switching and low self-compliance switching currents.

Original languageEnglish
Pages (from-to)60-63
Number of pages4
JournalSolid-State Electronics
StatePublished - 1 Jul 2012


  • GeO
  • Hopping conduction
  • RRAM
  • TaON
  • Uniformity

Fingerprint Dive into the research topics of 'Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide'. Together they form a unique fingerprint.

Cite this