Highly transparent, high-performance IGZO-TFTs using the selective formation of IGZO source and drain electrodes

Hung Chi Wu; Chao-Hsin Chien

doi:10.1109/LED.2014.2317943

Highly transparent, high-performance IGZO-TFTs using the selective formation of IGZO source and drain electrodes

Hung Chi Wu, Chao-Hsin Chien

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

In this letter, high-performance, highly transparent amorphous InGaZnO (IGZO) thin-film transistors (TFTs) with IGZO source/drain electrodes were fabricated. Rapid thermal annealing treatment effectively converted IGZO from a semiconductor into a conductor. Using a patterned SiO₂ capping layer, highly transparent IGZO-TFTs with selectively formed IGZO electrodes were fabricated on a glass substrate. The mobility of the fabricated IGZO-TFT was 8.3 cm²/V s, ON/OFF ratio was 3.1 × 10⁶, and subthreshold swing was 0.44 V/decade. Thus, the proposed scheme provides a simple and practical method of fabricating high-performance, highly transparent IGZO TFTs.

Original language	English
Article number	6809183
Pages (from-to)	645-647
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	6
DOIs	https://doi.org/10.1109/LED.2014.2317943
State	Published - 1 Jan 2014

Keywords

IGZO
RTA
self-aligned
TFT

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title = "Highly transparent, high-performance IGZO-TFTs using the selective formation of IGZO source and drain electrodes",

abstract = "In this letter, high-performance, highly transparent amorphous InGaZnO (IGZO) thin-film transistors (TFTs) with IGZO source/drain electrodes were fabricated. Rapid thermal annealing treatment effectively converted IGZO from a semiconductor into a conductor. Using a patterned SiO2 capping layer, highly transparent IGZO-TFTs with selectively formed IGZO electrodes were fabricated on a glass substrate. The mobility of the fabricated IGZO-TFT was 8.3 cm2/V s, ON/OFF ratio was 3.1 × 106, and subthreshold swing was 0.44 V/decade. Thus, the proposed scheme provides a simple and practical method of fabricating high-performance, highly transparent IGZO TFTs.",

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AU - Chien, Chao-Hsin

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N2 - In this letter, high-performance, highly transparent amorphous InGaZnO (IGZO) thin-film transistors (TFTs) with IGZO source/drain electrodes were fabricated. Rapid thermal annealing treatment effectively converted IGZO from a semiconductor into a conductor. Using a patterned SiO2 capping layer, highly transparent IGZO-TFTs with selectively formed IGZO electrodes were fabricated on a glass substrate. The mobility of the fabricated IGZO-TFT was 8.3 cm2/V s, ON/OFF ratio was 3.1 × 106, and subthreshold swing was 0.44 V/decade. Thus, the proposed scheme provides a simple and practical method of fabricating high-performance, highly transparent IGZO TFTs.

AB - In this letter, high-performance, highly transparent amorphous InGaZnO (IGZO) thin-film transistors (TFTs) with IGZO source/drain electrodes were fabricated. Rapid thermal annealing treatment effectively converted IGZO from a semiconductor into a conductor. Using a patterned SiO2 capping layer, highly transparent IGZO-TFTs with selectively formed IGZO electrodes were fabricated on a glass substrate. The mobility of the fabricated IGZO-TFT was 8.3 cm2/V s, ON/OFF ratio was 3.1 × 106, and subthreshold swing was 0.44 V/decade. Thus, the proposed scheme provides a simple and practical method of fabricating high-performance, highly transparent IGZO TFTs.

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KW - self-aligned

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Highly transparent, high-performance IGZO-TFTs using the selective formation of IGZO source and drain electrodes

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Keywords

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