Highly transparent, high-performance IGZO-TFTs using the selective formation of IGZO source and drain electrodes

Hung Chi Wu, Chao-Hsin Chien

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

In this letter, high-performance, highly transparent amorphous InGaZnO (IGZO) thin-film transistors (TFTs) with IGZO source/drain electrodes were fabricated. Rapid thermal annealing treatment effectively converted IGZO from a semiconductor into a conductor. Using a patterned SiO2 capping layer, highly transparent IGZO-TFTs with selectively formed IGZO electrodes were fabricated on a glass substrate. The mobility of the fabricated IGZO-TFT was 8.3 cm2/V s, ON/OFF ratio was 3.1 × 106, and subthreshold swing was 0.44 V/decade. Thus, the proposed scheme provides a simple and practical method of fabricating high-performance, highly transparent IGZO TFTs.

Original languageEnglish
Article number6809183
Pages (from-to)645-647
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number6
DOIs
StatePublished - 1 Jan 2014

Keywords

  • IGZO
  • RTA
  • self-aligned
  • TFT

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