This paper demonstrates the growth of highly-textured boron-doped ZnO (ZnO:B) film by using low-pressure chemical-vapor-deposition (LPCVD) for efficient light harvesting and carrier collection in heterojunction silicon-based (HJS) solar cells. The optical and electrical characteristics have been optimized versus the substrate temperature and B 2 H 6 flow rate for tradeoffs among the sheet resistance, free-carrier absorption, and optical transmission of blue/green wavelengths. A HJS solar cell with a 1.6-μm-thick ZnO:B film achieves a high power conversion efficiency of 16.30% and fill factor of 78.05%, compared to 15.64% and 72.17%, respectively, from a counterpart with a conventional 80-nm-thick indium tin oxide layer.
|Number of pages||4|
|Journal||Journal of the Taiwan Institute of Chemical Engineers|
|State||Published - 1 Sep 2013|
- Heterojunction solar cell
- Low-pressure chemical-vapor-deposition