Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm

S. J. Chang*, Hsin-Chieh Yu, Y. K. Su, I. L. Chen, T. D. Lee, C. M. Lu, C. H. Chiou, Z. H. Lee, H. P. Yang, C. P. Sung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Highly strained GaAs-based all-epitaxial oxide confined vertical cavity surface emitting lasers (VCSELs) emitting in 1.25 μm were fabricated. Compared with the designed cavity resonance, it was found that lasing wavelength blue shifted by 29 nm when the driving current was small. The observation of such oxide mode is attributed to the effective optical thickness shrinkage of the oxide layer, and large detuning between the gain peak and cavity resonance.

Original languageEnglish
Pages (from-to)60-63
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume121
Issue number1-2
DOIs
StatePublished - 25 Jul 2005

Keywords

  • Highly strain
  • InGaAs
  • Oxide mode
  • VCSEL

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