Highly Strained 1: 22-μM Ingaas Lasers Grown By Movpe

W. C. Chen, Y. K. Su, R. W. Chuang, Hsin-Chieh Yu, M. C. Tsai, K. Y. Cheng, J. B. Horng, C. Hu, Seth Tsau

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Abstract

In this work, the highly strained In0.39 Ga0. 61As-GaAs lasers grown by metal-organic vapor phase epitaxy were studied. The InGaAs lasers could emit at 1.22 μm under continuous-wave conditions, whereas the threshold current density (Jth) and transparency current density (Jtr) were 140 and 37.2 A/cm2, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers longer than 1.2 μm. The characteristic temperature (T0) was 146.2 K indicating the good temperature stability. These excellent laser characteristics could be attributed to the optimized growth conditions.

Original languageEnglish
Pages (from-to)264-266
Number of pages3
JournalIEEE Photonics Technology Letters
Volume20
Issue number4
DOIs
StatePublished - 15 Feb 2008

Keywords

  • InGaAs
  • lasers
  • metal-organic vapor phase epi-taxy (MOVPE)
  • photoluminescence (PL)

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    Chen, W. C., Su, Y. K., Chuang, R. W., Yu, H-C., Tsai, M. C., Cheng, K. Y., Horng, J. B., Hu, C., & Tsau, S. (2008). Highly Strained 1: 22-μM Ingaas Lasers Grown By Movpe. IEEE Photonics Technology Letters, 20(4), 264-266. https://doi.org/10.1109/LPT.2007.913745