Highly stable SrZrO3 bipolar resistive switching memory by Ti modulation layer

Ming Chi Wu*, Meng Han Lin, Yu Ting Yeh, Chen Hsi Lin, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

In this study, we investigated the resistive switching characteristics of the SrZrO3 (SZO)-based resistance random access memory (RRAM). After the sequential thin-films Pt/TiZSZO/LaNiO3 deposition, the post annealing (PA) treatment under various conditions was carried out to form the interfacial layer (TiOx) between Ti and SZO. It can be proved that the Ti modulation layer act as an oxygen getter can modify the resistive switching property of RRAM. With the suitable thickness of Ti layer and the proper annealing temperature, the SZO-based RRAM device could have a lower operation voltage, a lower compliance current a long retention behavior, and stable resistance ratio over 104 s under 0.3 V reading voltage.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems 4
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages411-420
Number of pages10
Edition2
DOIs
StatePublished - 30 Dec 2010
Event4th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 217th ECS Meeting - Vancouver, BC, Canada
Duration: 26 Apr 201028 Apr 2010

Publication series

NameECS Transactions
Number2
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference4th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 217th ECS Meeting
CountryCanada
CityVancouver, BC
Period26/04/1028/04/10

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