Highly-scaled 3.6-nm ENT trapping layer MONOS device with good retention and endurance

Chung-Yong Tsai, T. H. Lee, Albert Chin, Hong Wang, C. H. Cheng, F. S. Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

13 Scopus citations

Abstract

Novel MONOS CTF, with record thinnest 3.6 nm ENT trapping layer, has a large 3.1 V 10-year extrapolated retention window at 125°C and excellent 106 endurance at a fast 100 μs and ±16 V program/erase. This is achieved using an As+-implanted higher κ trapping layer with deep 5.1 eV work-function of As. In contrast, the un-implanted device only has a small 10-year retention window of 1.9 V at 125°C.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
DOIs
StatePublished - 1 Dec 2010
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 6 Dec 20108 Dec 2010

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period6/12/108/12/10

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