Highly scalable NAND-type PHINES flash memory for data flash applications

C. C. Yeh*, Y. Y. Liao, W. J. Tsai, T. C. Lu, T. F. Ou, H. L. Kao, Ta-Hui Wang, Wen Chi Ting, Joseph Ku, Chih Yuau Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, two NAND-type PHINES flash memory architectures (1 bit/cell and physically 2 bit/cell) are proposed for mass storage applications. PHINES nitride trapping storage flash memory features high storage density, low power operation, good reliability, simple process, and high programming throughput. Fifteen-nm generation is feasible for future flash memory technology.

Original languageEnglish
Title of host publication21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006
Pages76-77
Number of pages2
DOIs
StatePublished - 21 Nov 2006
Event21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006 - Monteray, CA, United States
Duration: 12 Feb 200616 Feb 2006

Publication series

Name21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006
Volume2006

Conference

Conference21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006
CountryUnited States
CityMonteray, CA
Period12/02/0616/02/06

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