Highly reliable MA BE-SONOS (Metal-Al2O3 Bandgap Engineered SONOS) using a SiO2 buffer layer

Sheng Chih Lai*, Hang Ting Lue, Chien Wei Liao, Tai Bor Wu, Ming Jui Yang, Yi Hsien Lue, Jung Yu Hsieh, Szu Yu Wang, Guang Li Luo, Chao-Hsin Chien, Kuang Yeu Hsieh, Rich Liu, Chih Yuan Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A Metal-high-K Bandgap-Engineered SONOS (MA BE-SONOS) with an additional SiO2 buffer layer is proposed. The thin SiO2 (5-6 nm) layer between the high-K (Al2O3) and nitride serves to prevent shallow trap generation. Contrary to the previously proposed MANOS or MA BE-SONOS devices using a simple high-k top dielectric, this composite structure eliminates the unstable high-K/nitride interface. Experimental results show that this new device can well suppress the erase saturation, just like MANOS. On the other hand, the data retention is greatly improved, owing to the much more stable interface between the nitride-trapping layer and top oxide. Very large memory window (> 7V) with excellent cycling endurance, read disturb immunity, and data retention has been successfully demonstrated. Theoretical model is also proposed to explain the principle of this device.

Original languageEnglish
Title of host publication2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Pages58-59
Number of pages2
DOIs
StatePublished - 14 Aug 2008
Event2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan
Duration: 21 Apr 200823 Apr 2008

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
CountryTaiwan
CityHsinchu
Period21/04/0823/04/08

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