Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure

Kow-Ming Chang; Jiunn Yi Chu; Chao Chen Cheng

doi:10.1109/LPT.2004.830523

Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure

Kow-Ming Chang^*, Jiunn Yi Chu, Chao Chen Cheng

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to journal › Article

23 Scopus citations

Abstract

Indium-tin-oxide (ITO) is deposited as a transparent current spreading layer of GaN-based light-emitting diodes (LEDs). To reduce the interfacial Schottky barrier height, a thin p - In_0.1Ga_0.9N layer is grown as an intermediate between ITO and p-GaN. The contact resistivity around 2.6 × 10^-2 Ω · cm² results in a moderately high forward voltage LED of 3.43 V operated at 20 mA. However, the external quantum efficiency and power efficiency are enhanced by 46% and 36%, respectively, in comparison with the conventional Ni-Au contact LEDs. In the life test, the power degradation of the p-In_0.1Ga_0.9N-ITO contact samples also exhibits a lower value than that of the conventional ones.

Original language	English
Pages (from-to)	1807-1809
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	8
DOIs	https://doi.org/10.1109/LPT.2004.830523
State	Published - 1 Aug 2004

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Chang, K-M., Chu, J. Y., & Cheng, C. C. (2004). Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure. IEEE Photonics Technology Letters, 16(8), 1807-1809. https://doi.org/10.1109/LPT.2004.830523

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abstract = "Indium-tin-oxide (ITO) is deposited as a transparent current spreading layer of GaN-based light-emitting diodes (LEDs). To reduce the interfacial Schottky barrier height, a thin p - In0.1Ga0.9N layer is grown as an intermediate between ITO and p-GaN. The contact resistivity around 2.6 × 10-2 Ω · cm2 results in a moderately high forward voltage LED of 3.43 V operated at 20 mA. However, the external quantum efficiency and power efficiency are enhanced by 46% and 36%, respectively, in comparison with the conventional Ni-Au contact LEDs. In the life test, the power degradation of the p-In0.1Ga0.9N-ITO contact samples also exhibits a lower value than that of the conventional ones.",

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AB - Indium-tin-oxide (ITO) is deposited as a transparent current spreading layer of GaN-based light-emitting diodes (LEDs). To reduce the interfacial Schottky barrier height, a thin p - In0.1Ga0.9N layer is grown as an intermediate between ITO and p-GaN. The contact resistivity around 2.6 × 10-2 Ω · cm2 results in a moderately high forward voltage LED of 3.43 V operated at 20 mA. However, the external quantum efficiency and power efficiency are enhanced by 46% and 36%, respectively, in comparison with the conventional Ni-Au contact LEDs. In the life test, the power degradation of the p-In0.1Ga0.9N-ITO contact samples also exhibits a lower value than that of the conventional ones.

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