TY - JOUR
T1 - Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure
AU - Chang, Kow-Ming
AU - Chu, Jiunn Yi
AU - Cheng, Chao Chen
PY - 2004/8/1
Y1 - 2004/8/1
N2 - Indium-tin-oxide (ITO) is deposited as a transparent current spreading layer of GaN-based light-emitting diodes (LEDs). To reduce the interfacial Schottky barrier height, a thin p - In0.1Ga0.9N layer is grown as an intermediate between ITO and p-GaN. The contact resistivity around 2.6 × 10-2 Ω · cm2 results in a moderately high forward voltage LED of 3.43 V operated at 20 mA. However, the external quantum efficiency and power efficiency are enhanced by 46% and 36%, respectively, in comparison with the conventional Ni-Au contact LEDs. In the life test, the power degradation of the p-In0.1Ga0.9N-ITO contact samples also exhibits a lower value than that of the conventional ones.
AB - Indium-tin-oxide (ITO) is deposited as a transparent current spreading layer of GaN-based light-emitting diodes (LEDs). To reduce the interfacial Schottky barrier height, a thin p - In0.1Ga0.9N layer is grown as an intermediate between ITO and p-GaN. The contact resistivity around 2.6 × 10-2 Ω · cm2 results in a moderately high forward voltage LED of 3.43 V operated at 20 mA. However, the external quantum efficiency and power efficiency are enhanced by 46% and 36%, respectively, in comparison with the conventional Ni-Au contact LEDs. In the life test, the power degradation of the p-In0.1Ga0.9N-ITO contact samples also exhibits a lower value than that of the conventional ones.
UR - http://www.scopus.com/inward/record.url?scp=4043099796&partnerID=8YFLogxK
U2 - 10.1109/LPT.2004.830523
DO - 10.1109/LPT.2004.830523
M3 - Article
AN - SCOPUS:4043099796
VL - 16
SP - 1807
EP - 1809
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 8
ER -