Highly reliable chemical-mechanical polishing process for organic low-k methylsilsesquioxane

Po-Tsun Liu*, Ting Chang Chang, Ming Chih Huang, M. S. Tsai, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

An efficient CMP process for organic low-k MSQ as an intermetal dielectric material is reported. The commercial SS-25™ silica-based slurry combined with the additive TMAH can accelerate the polish rate of organic MSQ film. The presence of nitrogen effectively prevents the post-CMP MSQ from moisture uptake and copper diffusion.

Original languageEnglish
Pages (from-to)1212-1218
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number4
DOIs
StatePublished - 1 Jul 2001
Event19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States
Duration: 15 Oct 200018 Oct 2000

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