An efficient CMP process for organic low-k MSQ as an intermetal dielectric material is reported. The commercial SS-25™ silica-based slurry combined with the additive TMAH can accelerate the polish rate of organic MSQ film. The presence of nitrogen effectively prevents the post-CMP MSQ from moisture uptake and copper diffusion.
|Number of pages||7|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 1 Jul 2001|
|Event||19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States|
Duration: 15 Oct 2000 → 18 Oct 2000