Highly reliable amorphous Si TFT with low leakage for AMLCD and AMOLED applications

Chi Wen Chen*, Tseung-Yuen Tseng, Ting Chang Chang, Kao Cheng Wang, Chen Shuo Huang, Chia Chun Ling, Po-Tsun Liu, Hau Yan Lu

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

A novel technology for manufacturing high-performance hydrogenated amorphous silicon (a-Si:H) TFT is developed in this work. In the bottom gate light-shied a-Si:H TFT structure, the side edge of a-Si:H island is capped with extra deposition of heavily phosphorous-doped a-Si layer. Such an ingenuity can effectively eliminate the leakage path between the parasitic contacts between source/drain metal and a-Si:H at the edge of a-Si:H island. In addition, electrical performance of the novel a-Si:H TFT device exhibits superior effective carrier mobility, as high as 1.05 cm 2 /Vsec due to the enormous improvement in parasitic resistance. The impressively high performance provides the potential of our proposed a-Si:H TFT to apply for AMLCD and AMOLED technology.

Original languageEnglish
Article numberP-15
Pages (from-to)280-283
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume36
Issue number1
DOIs
StatePublished - 1 Jan 2005
EventSID Symposium Digest of Technical Papers - Boston, MA, United States
Duration: 29 Jul 200429 Jul 2004

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