A novel technology for manufacturing high-performance hydrogenated amorphous silicon (a-Si:H) TFT is developed in this work. In the bottom gate light-shied a-Si:H TFT structure, the side edge of a-Si:H island is capped with extra deposition of heavily phosphorous-doped a-Si layer. Such an ingenuity can effectively eliminate the leakage path between the parasitic contacts between source/drain metal and a-Si:H at the edge of a-Si:H island. In addition, electrical performance of the novel a-Si:H TFT device exhibits superior effective carrier mobility, as high as 1.05 cm 2 /Vsec due to the enormous improvement in parasitic resistance. The impressively high performance provides the potential of our proposed a-Si:H TFT to apply for AMLCD and AMOLED technology.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|State||Published - 1 Jan 2005|
|Event||SID Symposium Digest of Technical Papers - Boston, MA, United States|
Duration: 29 Jul 2004 → 29 Jul 2004