Highly reflective Ag/La bilayer ohmic contacts to p-type GaN

I. Chen Chen*, Yi Dar Chen, Chih Chien Hsieh, Cheng-Huang Kuo, Li Chuan Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

A new Ag/La bilayer metal contact scheme has been developed for producing high reflectance and low contact resistivity ohmic contacts to p-GaN. An excellent reflectance of over 91% at 460 nm wavelength and low specific contact resistivity of 1.6× 10-4 ω cm2 were obtained from Ag/La (150/20 nm) contact annealed at 450°C for 1 min. The La overlayer was oxidized to form La2 O3 when exposed to air, which effectively suppresses exposure of the Ag layer to oxygen atmosphere during annealing, leading to a good ohmic contact with smooth surface morphology and high reflectance. Additionally, Ag/La contacts show excellent thermal stability after a long thermal annealing at 300°C in air ambient.

Original languageEnglish
Pages (from-to)H285-H288
Number of pages4
JournalJournal of the Electrochemical Society
Volume158
Issue number3
DOIs
StatePublished - 8 Feb 2011

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