Highly power efficient organic light-emitting diodes with a p-doping layer

Chan Ching Chang, Ming Ta Hsieh*, Jenn-Fang Chen, Shiao Wen Hwang, Chin H. Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

137 Scopus citations

Abstract

In this letter, the authors demonstrate p-i-n organic light-emitting diodes (OLEDs) incorporating a p -doped transport layer which comprises tungsten oxide (W O3) and 4, 4′, 4″ -tris (N -(2-naphthyl)- N -phenyl-amino) triphenylamine (2-TNATA) to replace the volatile tetrafluro- tetracyanoquinodimethane. The authors propose the 2-TNATA:W O3 composition functions as a p -doping layer which significantly improves hole injection and conductivity of the device that leads to the fabrication of tris(8- quinolinolato)aluminum based p-i-n OLEDs with long lifetime, low driving voltage (3.1 V), and high power efficiency (3.5 lmW) at 100 cd m2.

Original languageEnglish
Article number253504
JournalApplied Physics Letters
Volume89
Issue number25
DOIs
StatePublished - 1 Dec 2006

Fingerprint Dive into the research topics of 'Highly power efficient organic light-emitting diodes with a p-doping layer'. Together they form a unique fingerprint.

Cite this