Highly power efficient organic light-emitting diodes with a novel P-doping layer

Chan Ching Chang*, Ming Ta Hsieh, Jenn-Fang Chen, Shiao Wen Hwang, Jia Wei Ma, Chin H. Chen

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

We demonstrate p-i-n organic light-emitting diodes (OLEDs) incorporating a p-doped transport layer which comprises tungsten oxide (WO3) and 4,4′,4″-tris(N-(2-naphthyl)-N-phenylamino)triphenylamine (2-TNATA) to replace the volatile and low Tg F4-TCNQ. We propose the 2-TNATA:WO 3 composition functions as a p-doping layer which significantly improves holeinjection and conductivity of the Alq3 based p-i-n OLEDs with long lifetime, low driving voltage (3.1 V), and high power efficiency (3.5 lm/W) at 100 cd/m2.

Original languageEnglish
Pages (from-to)1106-1109
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume37
Issue number1
DOIs
StatePublished - 1 Dec 2006
Event44th International Symposium, Seminar, and Exhibition, SID 2006 - San Francisco, CA, United States
Duration: 4 Jun 20069 Jun 2006

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