We demonstrate p-i-n organic light-emitting diodes (OLEDs) incorporating a p-doped transport layer which comprises tungsten oxide (WO3) and 4,4′,4″-tris(N-(2-naphthyl)-N-phenylamino)triphenylamine (2-TNATA) to replace the volatile and low Tg F4-TCNQ. We propose the 2-TNATA:WO 3 composition functions as a p-doping layer which significantly improves holeinjection and conductivity of the Alq3 based p-i-n OLEDs with long lifetime, low driving voltage (3.1 V), and high power efficiency (3.5 lm/W) at 100 cd/m2.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|State||Published - 1 Dec 2006|
|Event||44th International Symposium, Seminar, and Exhibition, SID 2006 - San Francisco, CA, United States|
Duration: 4 Jun 2006 → 9 Jun 2006