Highly oriented (Zr 0.7Sn 0.3)TiO 4 thin films grown by rf magnetron sputtering

Fang Jy Wu*, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

Thin films of (Zr 0.7Sn 0.3)TiO 4 on Si(100) were prepared by rf magnetron sputtering in the present study. Films of a highly preferred [020] orientation, as demonstrated by X-ray diffraction and transmission electron microscopic examinations, were grown successfully on a Si substrate with in situ postannealing at 700°C. The chemical composition of the films, measured by secondary ion mass spectroscopy, exhibited a uniform concentration distribution for all species. A study by X-ray photoelectron spectroscopy further revealed some firm evidence of a molecular orbital that affected the chemical structure. The dielectric constants of 400-nm-thick (Zr 0.7Sn 0.3)TiO 4 films in the present study were >18 for the films with a preferred orientation and ∼11 for polycrystalline films.

Original languageEnglish
Pages (from-to)439-443
Number of pages5
JournalJournal of the American Ceramic Society
Volume81
Issue number2
DOIs
StatePublished - 1 Feb 1998

Fingerprint Dive into the research topics of 'Highly oriented (Zr <sub>0.7</sub>Sn <sub>0.3</sub>)TiO <sub>4</sub> thin films grown by rf magnetron sputtering'. Together they form a unique fingerprint.

Cite this