Highly oriented diamond growth on SixGe1-x (100) thin films

Te Fu Chang*, Li Chang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


Highly oriented (100) diamond films have been successfully grown on SixGe1-x (100) thin films by bias enhanced nucleation (BEN) in microwave plasma chemical vapor deposition (MPCVD) system. Raman spectra show the 1332 cm-1 peak which proves the formation of diamond. Diamond nucleation density on SixGe1-x substrate estimated by scanning electron microscopy is higher than 109 cm -2. The interface between diamond and SixGe1-x substrate was characterized by transmission electron microscopy (TEM). About 20 nm decrease in thickness of the SixGe1-x film was observed after bias enhanced nucleation step. TEM shows the existence of silicon carbide and heteroepitaxial diamond grains grown on Si xGe1-x substrate. Characterization from high-resolution TEM on the specimen of short time deposition reveals that a number of epitaxial diamond grains were directly nucleated on SixGe1-x with {111} interplanar spacing ratio of diamond and SixGe1-x of 2:3. The diamond nucleation is found to be preferred on the ridge position of the rough substrate surface. Diamond {100} facets were quickly developed in the early stage of growth.

Original languageEnglish
Pages (from-to)2088-2091
Number of pages4
JournalDiamond and Related Materials
Issue number11-12
StatePublished - 1 Nov 2004
EventProceedings of the 9th International Conference on New Diamond - Tokyo, Japan
Duration: 26 Mar 200429 Mar 2004


  • Diamond
  • Nucleation
  • SixGe1-x
  • Transmission electron microscopy

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