Highly optimized electrical characteristics of a-Si TFT gate driver for display panel manufacturing

I. Hsiu Lo, Yiming Li*, Kuo Fu Lee, Tony Chiang, Kuen Yu Huang, Tsau Hua Hsieh

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

In this paper, we successfully optimize two gate driver circuits with amorphous silicon (a-Si:H) TFT to meet required electrical specifications by unified optimization framework [1]. Then the sensitivity analysis is conducted to verify the performance variation with respect to the characteristics of optimized circuits. Finally, the optimized circuits are fabricated to implement the comparisons of measurement and simulation data.

Original languageEnglish
Title of host publication10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Pages114-115
Number of pages2
StatePublished - 2010
Event10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 - Seoul, Korea, Republic of
Duration: 11 Oct 201015 Oct 2010

Publication series

NameProceedings of International Meeting on Information Display
ISSN (Print)1738-7558

Conference

Conference10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
CountryKorea, Republic of
CitySeoul
Period11/10/1015/10/10

Keywords

  • Electrical characteristic
  • Gate driver circuits
  • Simulation-based optimization
  • TFT-LCD

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