Highly efficient GaN power transistors and integrated circuits with high breakdown voltages

Tsuyoshi Tanaka*, Tetsuzo Ueda, Daisuke Ueda

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

GaN is very promising for power switching transistors taking advantages of the high breakdown strength with high saturation electron velocity. The lateral and compact device configuration enables high speed switching with reduced on-state resistance and parasitic capacitance. In this paper, state-of-the-art device technologies of GaN transistor and its monolithic integration for switching applications are reviewed. The topics include a novel normally-off transistor called Gate Injection Transistor (GIT) fabricated on a cost-effective Si substrate, and thermally stable isolation by Fe ion implantation. These are applied for the world first monolithic GaN inverter IC for motor drive with high efficiency. The presented technologies are indispensable for wide-spread use of GaN power switching transistors in the future.

Original languageEnglish
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages1315-1318
Number of pages4
DOIs
StatePublished - 1 Dec 2010
Event2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 1 Nov 20104 Nov 2010

Publication series

NameICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period1/11/104/11/10

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