Highly crystalline MoS2 thin films grown by pulsed laser deposition

Claudy R. Serrao, Anthony M. Diamond, Shang Lin Hsu, Long You, Sushant Gadgil, James Clarkson, Carlo Carraro, Roya Maboudian, Chen-Ming Hu, Sayeef Salahuddin

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Highly crystalline thin films of MoS2 were prepared over large area by pulsed laser deposition down to a single monolayer on Al2O3 (0001), GaN (0001), and SiC-6H (0001) substrates. X-ray diffraction and selected area electron diffraction studies show that the films are quasi-epitaxial with good out-of-plane texture. In addition, the thin films were observed to be highly crystalline with rocking curve full width half maxima of 0.01°, smooth with a RMS roughness of 0.27 nm, and uniform in thickness based on Raman spectroscopy. From transport measurements, the as-grown films were found to be p-type.

Original languageEnglish
Article number052101
JournalApplied Physics Letters
Issue number5
StatePublished - 2 Feb 2015

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