Highly (111) textured titanium nitride layers for sub-quarter-micrometer Al metallization

Wen Fa Wu, Chien-Cheng Lin, Chyi Chyuan Huang, Horng-Chih Lin, Ting Chang Chang, Rong Ping Yang, Tiao Yuan Huang

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Texture improved TiN films were prepared by a two-step deposition process. A thin uncollimated TiN layer is deposited first at low substrate temperature and sputtering power. This layer has poor step coverage and high resistivity, but acts as a crystallographic seed layer for the subsequent collimated TiN layer deposited at high substrate temperature and sputtering power. The TiN layer stack is deposited sequentially without vacuum break. The resulting TiN layer has a low resistivity of 72.25 μΩ cm, high 〈111〉 preferred orientation, and improved bottom coverage in sub-quarter-micrometer contact holes and trenches.

Original languageEnglish
Pages (from-to)342-344
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume2
Issue number7
DOIs
StatePublished - 1 Jul 1999

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