Highly (111)-oriented nanotwinned Cu for high fatigue resistance in fan-out wafer-level packaging

Yu Jin Li, Chih Han Theng*, I. Hsin Tseng, Chih Chen, Benson Lin, Chia Cheng Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

Fan out wafer level packaging is a potential solution for combining high electrical performance and low cost. However, with the shrinkage of the package, the mechanical reliability of the copper redistribution layer becomes an important issue. However, based on the processing of fan out packaging, the copper lines were annealed several times during the process. The annealing process is harmful to traditional strengthen mechanisms but not to columnar grains with high-density twinning structure. In this study, the technology of electroplating highly <111>-oriented copper lines was introduced to solve the reliability issue in copper RDLs. By the nature of nano-twinned Cu, the performance of thermal cycling test (TCT) lifetime is much better than normal copper, and the failure mechanisms were discussed in this study.

Original languageEnglish
Title of host publicationProceedings - IEEE 69th Electronic Components and Technology Conference, ECTC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages758-762
Number of pages5
ISBN (Electronic)9781728114989
DOIs
StatePublished - May 2019
Event69th IEEE Electronic Components and Technology Conference, ECTC 2019 - Las Vegas, United States
Duration: 28 May 201931 May 2019

Publication series

NameProceedings - Electronic Components and Technology Conference
Volume2019-May
ISSN (Print)0569-5503

Conference

Conference69th IEEE Electronic Components and Technology Conference, ECTC 2019
CountryUnited States
CityLas Vegas
Period28/05/1931/05/19

Keywords

  • Cu
  • Fan-out
  • Nano-twinned
  • TCT (key words)

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