Higher drive current for SiGe nanowires

Kow-Ming Chang*, Jiun Ming Kuo, Heng Hsin Wu, Wen Hsien Tzeng, Tzu Liu Wu, Wen Chan Chao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

Nanowire is mainly used in biological sensor because it has the high surface-to-volume ratio. In this study, we have successfully fabricated the Poly-Si and SiGe nanowire with Ge = 7% and 11 % respectively by side-wall spacer technique. In order to normalize the drive current of nanowires, we consider the nanowire as a resistance. The conductance is chose for comparison between the nanowires. The higher conductance achieved of SiGe nanowire with/without nanowire implantation and the SiGe nanowire with higher Ge concentration had higher conductance. However, the disadvantage of lower contact resistance is found in SiGe pad. The 3-amino-propyltriethoxy-silane (APTES) was used to modify the surface, which can detect the charge with different pH. Comparing the conductance change; the SiGe nanowire with higher Ge concentration improved the sensitivity. But the over-higher Ge concentration (40%) did not increase the sensitivity; the reason maybe the higher defect appears at the surface as higher Ge concentration.

Original languageEnglish
Title of host publication2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Pages315-319
Number of pages5
DOIs
StatePublished - 1 Oct 2008
Event2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China
Duration: 24 Mar 200827 Mar 2008

Publication series

Name2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Conference

Conference2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
CountryChina
CityShanghai
Period24/03/0827/03/08

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