Higher-κ titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors

C. H. Cheng*, H. H. Hsu, P. C. Chen, B. H. Liou, Albert Chin, F. S. Yeh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this work, we studied a TiO2 mixed LaAlO3 dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/μm2 and a low leakage current of 7.5 × 10-7 A/cm2 at -1 V. Comparing to the control samples of TiLaO (TLO), TLAO dielectrics with Al2O3 doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO2-based dielectrics with the introduction of Al2O3 might be favorable for the improved engineering of MIM capacitors.

Original languageEnglish
Pages (from-to)646-649
Number of pages4
JournalSolid-State Electronics
Volume54
Issue number6
DOIs
StatePublished - 1 Jun 2010

Keywords

  • AlO
  • LaAlO
  • Metal-insulator-metal capacitor

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