Higher κ metal-gate/high-κ/Ge n-MOSFETs with <1 nm EOT using laser annealing

W. B. Chen, B. S. Shie, Albert Chin, K. C. Hsu, C. C. Chi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

12 Scopus citations

Abstract

High performance metal-gate/high-κ/Ge n-MOSFETs are reached with low 73 Ω/sq sheet resistance (Rs), 1.10 ideality factor, 0.95 nm EOT, small 106 mV/dec sub-threshold slope (SS), good 285 cm2/Vs high-field (1 MV/cm) mobility and low 37 mV ΔVt PBTI (85°C, 1 hr). This is achieved by using 30-ns laser annealing that leads to 57% higher gate capacitance, better n+/p junction and 10X better I ON/IOFF.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
DOIs
StatePublished - 1 Dec 2010
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 6 Dec 20108 Dec 2010

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period6/12/108/12/10

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