We report a high effective work function (φm-eff) and a very low Vt Ir gate on HfLaO p-MOSFETs using novel self-aligned low-temperature shallow junctions. This gate-first process has shallow junctions of 9.6 or 20 nm that are formed by solid phase diffusion using SiO2-covered Ga or Ni/Ga. At 1.2-nm effective oxide thickness, good φm-eff of 5.3 eV, low Vt of +0.05 V, high mobility of 90 cm2/V ·s at -0.3 MV/cm, and small 85°C negative bias-temperature instability (NBTI) of 20 mV (10 MV/cm for 1 h) are measured for Ir/HfLaO p-MOSFETs.
- Solid phase diffusion
- Ultrashallow junction