High-work-function Ir/HfLaO p-MOSFETs using low-temperature-processed shallow junction

C. F. Cheng*, C. H. Wu, N. C. Su, S. J. Wang, Sean P. McAlister, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We report a high effective work function (φm-eff) and a very low Vt Ir gate on HfLaO p-MOSFETs using novel self-aligned low-temperature shallow junctions. This gate-first process has shallow junctions of 9.6 or 20 nm that are formed by solid phase diffusion using SiO2-covered Ga or Ni/Ga. At 1.2-nm effective oxide thickness, good φm-eff of 5.3 eV, low Vt of +0.05 V, high mobility of 90 cm2/V ·s at -0.3 MV/cm, and small 85°C negative bias-temperature instability (NBTI) of 20 mV (10 MV/cm for 1 h) are measured for Ir/HfLaO p-MOSFETs.

Original languageEnglish
Pages (from-to)838-843
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number3
StatePublished - 1 Mar 2008


  • HfLaO
  • Solid phase diffusion
  • Ultrashallow junction

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