High-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic SoC in a 0.18-μm CMOS process

Chun Yu Lin*, Yi Ju Li, Ming-Dou Ker

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

A novel design of high-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic system-on-chip (SoC) in a 0.18-μm CMOS process was proposed. This design can deliver the required stimulus current within a specific range of loading impedance. Besides, this design in 0.18-μm low-voltage CMOS process can be operated at high voltage by using only low-voltage transistors. Without using high-voltage transistors, the process step can be reduced and the fabrication yield can be improved. The proposed design can be further integrated for the electronic epilepsy prosthetic SoC applications.

Original languageEnglish
Title of host publication2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012
Pages125-128
Number of pages4
DOIs
StatePublished - 7 Nov 2012
Event2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012 - Montreal, QC, Canada
Duration: 17 Jun 201220 Jun 2012

Publication series

Name2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012

Conference

Conference2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012
CountryCanada
CityMontreal, QC
Period17/06/1220/06/12

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    Lin, C. Y., Li, Y. J., & Ker, M-D. (2012). High-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic SoC in a 0.18-μm CMOS process. In 2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012 (pp. 125-128). [6328972] (2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012). https://doi.org/10.1109/NEWCAS.2012.6328972