High-voltage nLDMOS in waffle-layout style with body-injected technique for ESD protection

Wen Yi Chen*, Ming-Dou Ker

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Electrostatic-discharge robustness of n-channel lateral DMOS (nLDMOS) has been significantly increased in this letter through the waffle-layout style with body-current injection. This body-injected technique on high-voltage nLDMOS has been successfully verified in a 0.5-μm 16-V bipolar CMOS DMOS process without additional process or mask modification. The TLP-measured results confirmed that the secondary breakdown current (It2) of nLDMOS has a more than 2× increase by the body-current injection.

Original languageEnglish
Pages (from-to)389-391
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number4
DOIs
StatePublished - 24 Feb 2009

Keywords

  • Bipolar CMOS DMOS (BCD) process
  • Body-current injection
  • Electrostatic discharge (ESD)
  • Lateral DMOS (LDMOS)

Fingerprint Dive into the research topics of 'High-voltage nLDMOS in waffle-layout style with body-injected technique for ESD protection'. Together they form a unique fingerprint.

  • Cite this