High voltage characteristics of junctionless poly-silicon thin film transistors

Ya-Chi Cheng; Yung-Chun Wu; Hung Bin Chen; Ming Hung Han; Nan-Heng Lu; Jun-Ji Su; Chun-Yen Chang

doi:10.1063/1.4821856

High voltage characteristics of junctionless poly-silicon thin film transistors

Ya-Chi Cheng, Yung-Chun Wu, Hung Bin Chen, Ming Hung Han, Nan-Heng Lu, Jun-Ji Su, Chun-Yen Chang

International College of Semiconductor Technology

Research output: Contribution to journal › Article

8 Scopus citations

Abstract

The breakdown voltage (V-BD) and breakdown mechanism of junctionless (JL) poly-Si thin film transistor (TFT) were compared to the conventional inversion-mode (IM) TFT using fabricated devices and 3D quantum-corrected hydrodynamic transport device simulation. The simulated results are correspondent with experimental ones. The analyses of electric field distributions in on-state show that the channel of JL devices can equally share the voltage like a resistor, because there are no junctions formed between channel and source/drain. The JL TFT shows excellent breakdown characteristics; the off-state V-BD of 53.4V is several times larger than V-BD of 9.5V in IM TFT with same device size. JL devices have large potential for high voltage power metal-oxide-semiconductor devices and circuit applications. (C) 2013 AIP Publishing LLC.

Original language	English
Article number	123510
Journal	Applied Physics Letters
Volume	103
Issue number	12
DOIs	https://doi.org/10.1063/1.4821856
State	Published - 16 Sep 2013

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Cheng, Y-C., Wu, Y-C., Chen, H. B., Han, M. H., Lu, N-H., Su, J-J., & Chang, C-Y. (2013). High voltage characteristics of junctionless poly-silicon thin film transistors. Applied Physics Letters, 103(12), [123510]. https://doi.org/10.1063/1.4821856

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title = "High voltage characteristics of junctionless poly-silicon thin film transistors",

abstract = "The breakdown voltage (V-BD) and breakdown mechanism of junctionless (JL) poly-Si thin film transistor (TFT) were compared to the conventional inversion-mode (IM) TFT using fabricated devices and 3D quantum-corrected hydrodynamic transport device simulation. The simulated results are correspondent with experimental ones. The analyses of electric field distributions in on-state show that the channel of JL devices can equally share the voltage like a resistor, because there are no junctions formed between channel and source/drain. The JL TFT shows excellent breakdown characteristics; the off-state V-BD of 53.4V is several times larger than V-BD of 9.5V in IM TFT with same device size. JL devices have large potential for high voltage power metal-oxide-semiconductor devices and circuit applications. (C) 2013 AIP Publishing LLC.",

author = "Ya-Chi Cheng and Yung-Chun Wu and Chen, {Hung Bin} and Han, {Ming Hung} and Nan-Heng Lu and Jun-Ji Su and Chun-Yen Chang",

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AU - Cheng, Ya-Chi

AU - Wu, Yung-Chun

AU - Chen, Hung Bin

AU - Han, Ming Hung

AU - Lu, Nan-Heng

AU - Su, Jun-Ji

AU - Chang, Chun-Yen

PY - 2013/9/16

Y1 - 2013/9/16

N2 - The breakdown voltage (V-BD) and breakdown mechanism of junctionless (JL) poly-Si thin film transistor (TFT) were compared to the conventional inversion-mode (IM) TFT using fabricated devices and 3D quantum-corrected hydrodynamic transport device simulation. The simulated results are correspondent with experimental ones. The analyses of electric field distributions in on-state show that the channel of JL devices can equally share the voltage like a resistor, because there are no junctions formed between channel and source/drain. The JL TFT shows excellent breakdown characteristics; the off-state V-BD of 53.4V is several times larger than V-BD of 9.5V in IM TFT with same device size. JL devices have large potential for high voltage power metal-oxide-semiconductor devices and circuit applications. (C) 2013 AIP Publishing LLC.

AB - The breakdown voltage (V-BD) and breakdown mechanism of junctionless (JL) poly-Si thin film transistor (TFT) were compared to the conventional inversion-mode (IM) TFT using fabricated devices and 3D quantum-corrected hydrodynamic transport device simulation. The simulated results are correspondent with experimental ones. The analyses of electric field distributions in on-state show that the channel of JL devices can equally share the voltage like a resistor, because there are no junctions formed between channel and source/drain. The JL TFT shows excellent breakdown characteristics; the off-state V-BD of 53.4V is several times larger than V-BD of 9.5V in IM TFT with same device size. JL devices have large potential for high voltage power metal-oxide-semiconductor devices and circuit applications. (C) 2013 AIP Publishing LLC.

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