The breakdown voltage (V-BD) and breakdown mechanism of junctionless (JL) poly-Si thin film transistor (TFT) were compared to the conventional inversion-mode (IM) TFT using fabricated devices and 3D quantum-corrected hydrodynamic transport device simulation. The simulated results are correspondent with experimental ones. The analyses of electric field distributions in on-state show that the channel of JL devices can equally share the voltage like a resistor, because there are no junctions formed between channel and source/drain. The JL TFT shows excellent breakdown characteristics; the off-state V-BD of 53.4V is several times larger than V-BD of 9.5V in IM TFT with same device size. JL devices have large potential for high voltage power metal-oxide-semiconductor devices and circuit applications. (C) 2013 AIP Publishing LLC.
Cheng, Y-C., Wu, Y-C., Chen, H. B., Han, M. H., Lu, N-H., Su, J-J., & Chang, C-Y. (2013). High voltage characteristics of junctionless poly-silicon thin film transistors. Applied Physics Letters, 103(12), . https://doi.org/10.1063/1.4821856