High-Voltage and High-Temperature Applications of DTMOS With Reverse Schottky Barrier on Substrate Contacts

Tien-Sheng Chao*, Yao Jen Lee, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this letter, for the first time, application of dynamic threshold voltage MOSFET (DTMOS) with reverse Schottky barrier on substrate contacts (RSBSCs) for high voltage and high temperature is presented. By this RSBSC, DTMOS can be operated at high voltage (>0.7 V), and exhibits excellent performance at high temperature in terms of ideal subthreshold slope, low threshold voltage and high driving current.

Original languageEnglish
Pages (from-to)86-88
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number2
DOIs
StatePublished - 1 Feb 2004

Keywords

  • Dynamic threshold voltage MOSFET (DTMOS)
  • Schottky substrate junction
  • Temperature effect

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