High transconductance AlGaN/GaN MOSHFETs with photo-CVD gate oxide

Chun Kai Wang*, Tien Kun Lin, Yu Zung Chiou, Shoou Jinn Chang, Yan Kuin Su, Cheng-Huang Kuo, Tsun Kai Ko

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

High quality SiO2 was successfully deposited on GaN by photochemical vapour deposition (photo-CVD) using a D2 lamp as the excitation source. It was found that the interface state density was only 8.4 × 1011 cm-2 eV-1 for photo-CVD SiO2 layers on GaN prepared at 300°C. AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors were fabricated with photo-CVD oxide as the insulating layer. It was found that room temperature saturation Ids, maximum gm and gate voltage swing of the devices were 1220 mA mm-1, 240 mS mm-1 and 4.5 V, respectively. Even at an evaluated temperature of 300°C, the device still exhibits the maximum transconductance of 180 mS mm-1.

Original languageEnglish
Pages (from-to)1033-1036
Number of pages4
JournalSemiconductor Science and Technology
Volume18
Issue number12
DOIs
StatePublished - 1 Dec 2003

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