High thermally stable AlGaN/GaN high electron mobility transistors (HEMTs) on bulk semi-insulating GaN substrates

Hao Yu Wang, Hsien Chin Chiu*, Chong Rong Huang, Hao Chung Kuo, Sung Wen Huang Chen, Xinke Liu

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

In this study, a AlGaN/GaN high-electron-mobility transistor (HEMT) grown on the bulk GaN substrate was demonstrated and compared against one grown on the SiC substrate. Results of X-ray diffraction and reciprocal space mapping revealed that the bulk GaN substrate structure exhibited less lattice dislocation. The GaN substrate device demonstrated better IDS–VGS and gm–VGS characteristics of IDS = 700 mA/mm at VGS = +2 V and gmmax = 148 mS/mm. Compared with the SiC substrate, the current density in the HEMT grown on GaN was improved. The GaN substrate also improved current collapse and dynamic ON-state resistance due to a decrease in the trapping effect. The low-frequency noise and Hooge results also indicated that the GaN substrate had lower lattice dislocation.

Original languageEnglish
StatePublished - 1 Jan 2019
Event2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States
Duration: 29 Apr 20192 May 2019

Conference

Conference2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
CountryUnited States
CityMinneapolis
Period29/04/192/05/19

Keywords

  • Bulk GaN substrate
  • Gallium nitride
  • Microwave device

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    Wang, H. Y., Chiu, H. C., Huang, C. R., Kuo, H. C., Chen, S. W. H., & Liu, X. (2019). High thermally stable AlGaN/GaN high electron mobility transistors (HEMTs) on bulk semi-insulating GaN substrates. Paper presented at 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Minneapolis, United States.