High indium composition InGaN films were co-deposited on u-GaN templates using low temperature (300°C) pulsed laser deposition (PLD). The du-composition target consisted of a 3-inch indium sheet drilled with periodic rectangular holes mounted on a normal GaN wafer. By changing the ratio of the holes areas to total sheet area, the indium concentration in two InGaN films was set to 33% and 60%. The structural and optical characteristics of these films are investigated through isochronal and isothermal annealing. X-ray diffraction (XRD) and cathodeluminescence results for the 33% sample exhibited no significant differences in line-shape and peak position even after annealing at 800°C for 100 minutes. In contrast, the XRD peak of 60% sample became broadened under the same annealing condition. This slight inhomogeneity in composition also resulted in two visible peaks in the photoluminescence spectrum. Although the optical properties of the 60% sample can be considered merely acceptable, the advantages of applying PLD to the growth of high thermal stability and high indium composition InGaN have been made clear. The PLD technique shows promise for developing long wavelength devices.