High thermal stability of indium-rich InGaN films (33 and 60%) grown by pulsed laser deposition

Tzu Yu Wang, Kun Ching Shen, Dong Sing Wuu*, Sin Liang Ou, Ray-Hua Horng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High indium composition InGaN films were co-deposited on u-GaN templates using low temperature (300°C) pulsed laser deposition (PLD). The du-composition target consisted of a 3-inch indium sheet drilled with periodic rectangular holes mounted on a normal GaN wafer. By changing the ratio of the holes areas to total sheet area, the indium concentration in two InGaN films was set to 33% and 60%. The structural and optical characteristics of these films are investigated through isochronal and isothermal annealing. X-ray diffraction (XRD) and cathodeluminescence results for the 33% sample exhibited no significant differences in line-shape and peak position even after annealing at 800°C for 100 minutes. In contrast, the XRD peak of 60% sample became broadened under the same annealing condition. This slight inhomogeneity in composition also resulted in two visible peaks in the photoluminescence spectrum. Although the optical properties of the 60% sample can be considered merely acceptable, the advantages of applying PLD to the growth of high thermal stability and high indium composition InGaN have been made clear. The PLD technique shows promise for developing long wavelength devices.

Original languageEnglish
Title of host publicationTwelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting
DOIs
StatePublished - 1 Dec 2012
Event12th International Conference on Solid State Lighting and 4th International Conference on White LEDs and Solid State Lighting - San Diego, CA, United States
Duration: 13 Aug 201216 Aug 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8484
ISSN (Print)0277-786X

Conference

Conference12th International Conference on Solid State Lighting and 4th International Conference on White LEDs and Solid State Lighting
CountryUnited States
CitySan Diego, CA
Period13/08/1216/08/12

Keywords

  • Ingan
  • PLD
  • Thermal stability

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    Wang, T. Y., Shen, K. C., Wuu, D. S., Ou, S. L., & Horng, R-H. (2012). High thermal stability of indium-rich InGaN films (33 and 60%) grown by pulsed laser deposition. In Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting [84840V] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8484). https://doi.org/10.1117/12.930355