High thermal stability metal gate with tunable work function

Chih Feng Huang*, Bing-Yue Tsui

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

It has been reported that the work function of Ta-Pt alloys is tunable and Ta-Pt is a possible gate material for CMOS devices. In this work, we demonstrate that the Ta-Pt alloy is thermally stable up to 900°C. The impact of oxygen contamination and thermal stress on the stability of the MOS structure with the alloy gate is also discussed. It is concluded that the Ta-Pt alloy is a good candidate for gate electrode in the nanoscale CMOS regime and is compatible with the conventional self-aligned process.

Original languageEnglish
Pages451-454
Number of pages4
StatePublished - 27 Jul 2004
EventProceedings - 2004 24th International Conference on Microelectronics, MIEL 2004 - Nis
Duration: 16 May 200419 May 2004

Conference

ConferenceProceedings - 2004 24th International Conference on Microelectronics, MIEL 2004
CityNis
Period16/05/0419/05/04

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