It has been reported that the work function of Ta-Pt alloys is tunable and Ta-Pt is a possible gate material for CMOS devices. In this work, we demonstrate that the Ta-Pt alloy is thermally stable up to 900°C. The impact of oxygen contamination and thermal stress on the stability of the MOS structure with the alloy gate is also discussed. It is concluded that the Ta-Pt alloy is a good candidate for gate electrode in the nanoscale CMOS regime and is compatible with the conventional self-aligned process.
|Number of pages||4|
|State||Published - 27 Jul 2004|
|Event||Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004 - Nis|
Duration: 16 May 2004 → 19 May 2004
|Conference||Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004|
|Period||16/05/04 → 19/05/04|