High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETs

B. F. Hung*, C. H. Wu, Albert Chin, S. J. Wang, F. Y. Yen, Y. T. Hou, Y. Jin, H. J. Tao, Shih C. Chen, Mong Song Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

A novel 1000 °C-stable IrxSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in IrxSi/HfSiON transistors. The 1000 °C thermal stability above pure metal (900 °C only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface.

Original languageEnglish
Pages (from-to)257-261
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume54
Issue number2
DOIs
StatePublished - 1 Feb 2007

Keywords

  • Full silicidation (FUSI)
  • HfSiON
  • IrSi

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