Abstract
A novel 1000 °C-stable IrxSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in IrxSi/HfSiON transistors. The 1000 °C thermal stability above pure metal (900 °C only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface.
Original language | English |
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Pages (from-to) | 257-261 |
Number of pages | 5 |
Journal | IEEE Transactions on Electron Devices |
Volume | 54 |
Issue number | 2 |
DOIs | |
State | Published - 1 Feb 2007 |
Keywords
- Full silicidation (FUSI)
- HfSiON
- IrSi