High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETs

B. F. Hung; C. H. Wu; Albert Chin; S. J. Wang; F. Y. Yen; Y. T. Hou; Y. Jin; H. J. Tao; Shih C. Chen; Mong Song Liang

doi:10.1109/TED.2006.888626

High-temperature stable Ir_xSi gates with high work function on HfSiON p-MOSFETs

B. F. Hung^*, C. H. Wu, Albert Chin, S. J. Wang, F. Y. Yen, Y. T. Hou, Y. Jin, H. J. Tao, Shih C. Chen, Mong Song Liang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A novel 1000 °C-stable Ir_xSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in Ir_xSi/HfSiON transistors. The 1000 °C thermal stability above pure metal (900 °C only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface.

Original language	English
Pages (from-to)	257-261
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	54
Issue number	2
DOIs	https://doi.org/10.1109/TED.2006.888626
State	Published - 1 Feb 2007

Keywords

Full silicidation (FUSI)
HfSiON
IrSi

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title = "High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETs",

abstract = "A novel 1000 °C-stable IrxSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in IrxSi/HfSiON transistors. The 1000 °C thermal stability above pure metal (900 °C only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface.",

keywords = "Full silicidation (FUSI), HfSiON, IrSi",

author = "Hung, {B. F.} and Wu, {C. H.} and Albert Chin and Wang, {S. J.} and Yen, {F. Y.} and Hou, {Y. T.} and Y. Jin and Tao, {H. J.} and Chen, {Shih C.} and Liang, {Mong Song}",

year = "2007",

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doi = "10.1109/TED.2006.888626",

language = "English",

volume = "54",

pages = "257--261",

journal = "Ieee Transactions On Electron Devices",

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TY - JOUR

T1 - High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETs

AU - Hung, B. F.

AU - Wu, C. H.

AU - Chin, Albert

AU - Wang, S. J.

AU - Yen, F. Y.

AU - Hou, Y. T.

AU - Jin, Y.

AU - Tao, H. J.

AU - Chen, Shih C.

AU - Liang, Mong Song

PY - 2007/2/1

Y1 - 2007/2/1

N2 - A novel 1000 °C-stable IrxSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in IrxSi/HfSiON transistors. The 1000 °C thermal stability above pure metal (900 °C only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface.

AB - A novel 1000 °C-stable IrxSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in IrxSi/HfSiON transistors. The 1000 °C thermal stability above pure metal (900 °C only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface.

KW - Full silicidation (FUSI)

KW - HfSiON

KW - IrSi

UR - http://www.scopus.com/inward/record.url?scp=33847640079&partnerID=8YFLogxK

U2 - 10.1109/TED.2006.888626

DO - 10.1109/TED.2006.888626

M3 - Article

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VL - 54

SP - 257

EP - 261

JO - Ieee Transactions On Electron Devices

JF - Ieee Transactions On Electron Devices

SN - 0018-9383

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