We report a novel 1000°C stable HfLaON p-MOSFET with Ir 3 Si gate. Low leakage current of 1.8 × 10 -5 A/cm 2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm 2 /V · s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000°C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines.
- Ir Si
- Work function