High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3 Si gate

C. H. Wu, B. F. Hung, Albert Chin, S. J. Wang, X. P. Wang, M. F. Li, C. Zhu, F. Y. Yen, Y. T. Hou, Y. Jin, H. J. Tao, S. C. Chen, M. S. Liang

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Abstract

We report a novel 1000°C stable HfLaON p-MOSFET with Ir 3 Si gate. Low leakage current of 1.8 × 10 -5 A/cm 2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm 2 /V · s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000°C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines.

Original languageEnglish
Pages (from-to)292-294
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number4
DOIs
StatePublished - 1 Apr 2007

Keywords

  • HfLaON
  • Ir Si
  • MOSFET
  • Work function

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    Wu, C. H., Hung, B. F., Chin, A., Wang, S. J., Wang, X. P., Li, M. F., Zhu, C., Yen, F. Y., Hou, Y. T., Jin, Y., Tao, H. J., Chen, S. C., & Liang, M. S. (2007). High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3 Si gate. IEEE Electron Device Letters, 28(4), 292-294. https://doi.org/10.1109/LED.2007.892367