High-temperature stability of platinum silicide associated with fluorine implantation

Jiunn Yann Tsai*, Bing-Yue Tsui, Mao Chieh Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

High-temperature stability of the F+- or BF+ 2 -implanted PtSi thin film was investigated. For the PtSi films that received F+ implantation, the film characteristics remain unchanged even after annealing at 800 °C for 90 min, while for those without F + implantation, the film properties begin to degrade after annealing at 750 °C as observed by scanning electron microscopic inspection, Auger electron spectroscopy analysis, Rutherford backscattering spectroscopy analysis, and sheet resistance measurement. The secondary ion mass spectroscopy analysis indicates that the fluorine atoms are segregated to the PtSi/Si interface. A fluorine barrier model is proposed to explain the absence of Pt in-diffusion induced deterioration for the F+-implanted PtSi film.

Original languageEnglish
Pages (from-to)3530-3533
Number of pages4
JournalJournal of Applied Physics
Volume67
Issue number7
DOIs
StatePublished - 1 Dec 1990

Fingerprint Dive into the research topics of 'High-temperature stability of platinum silicide associated with fluorine implantation'. Together they form a unique fingerprint.

Cite this