High-temperature stability of lasing wavelength in GaAsSb/GaAs QW lasers

Cheng Tien Wan*, Yan Kuim Su, Ricky W. Chuang, Hsin-Chieh Yu, Chun Yuan Huang, Yi Shin Wang, Wei Cheng Chen, Wei Heng Lin, Manfred H. Pilkuhn

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this letter, we report the high-temperature stability of a lasing wavelength in GaAsSb/GaAs quantum-well (QW) lasers grown by metal-organic vapor phase epitaxy. To the best of our knowledge, this is the first successful use of triethylgallium (TEGa) as the precursor to grow GaAsSb/GaAs QW at low temperature (525 °C). The lasing wavelength ranges from 1117 to 1144 nm and varies with temperature λ/dT from 0.24 to 0.287 nm/K. These values are lower than those of other results reported previously. The QW grown at high temperature (600 °C) using trimethylgallium (TMGa) is also examined. The lasing wavelength is 1125.6 nm at room temperature, and dλ/dT is 0.36 nm/ K; the latter value is higher than those grown at lower temperature.

Original languageEnglish
Pages (from-to)1155-1157
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number11
DOIs
StatePublished - 6 Nov 2009

Keywords

  • GaAsSb
  • Lasers
  • Lasing wavelength stability against temperature shift
  • MOVPE

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